Thickness dependence of the physical properties of atomic-layer deposited Al2O3

Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer dep...

Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs

We report detailed current-transport studies of ultrathin Al2O3 dielectrics on GaAs grown by atomic layer deposition (ALD) as a function of film thickness, ambient temperature and electric field. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of the state-of-the-art SiO2 on Si, not counting on high dielectric constant for Al2O3. By measuring leakage curr...

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3...

Capacitance-voltage Characterization of Atomic-Layer-Deposited Al2O3/InGaAs and Al2O3/GaAs Metal –Oxide-Semiconductor Structures

ALD Al2O3/GaAs and Al2O3/In0.2Ga0.8As MOS and source-drain implanted MOSFET structure were fabricated and characterized by capacitance-voltage (CV) and current-voltage (I-V) measurements. It is shown that, after high-temperature anneal, the MOS leakage current density of the thinner (16nm) film is much higher than that of the thicker (30nm) film. The highquality Al2O3 (30nm)/In0.2Ga0.8As interf...